RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Micron Technology 4ATF51264AZ-3G2E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster write speed, GB/s
11.8
8.3
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-3G2E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
48
51
Around -6% lower latency
Faster reading speed, GB/s
17.5
15.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
48
Read speed, GB/s
15.6
17.5
Write speed, GB/s
11.8
8.3
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2687
2196
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF51264AZ-3G2E1 4GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CM4B16G1J2400A16K2-O 16GB
Kingston 9905469-153.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMT32GX4M4Z3200C16 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9965589-013.A00G 8GB
Kingston 9905471-071.A00LF 8GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 9905630-033.A00G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
AMD R5S38G1601U2S 8GB
V-GEN D4H8GL36A8TXV 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology ILG8GS2400A 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Kingston HX316C10F/8 8GB
Samsung M378B1G73DB0-CK0 8GB
Samsung M393B1K70CH0-YH9 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMWX16GC3200C16W2E 16GB
Report a bug
×
Bug description
Source link