RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A5143DB0-CRC 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A5143DB0-CRC 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M393A5143DB0-CRC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
10
Average value in the tests
Faster write speed, GB/s
11.8
7.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Samsung M393A5143DB0-CRC 4GB
Report a bug
Below the latency in the PassMark tests, ns
47
51
Around -9% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A5143DB0-CRC 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
47
Read speed, GB/s
15.6
10.0
Write speed, GB/s
11.8
7.5
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2308
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A5143DB0-CRC 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4133C19-4GTZ 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A5143DB0-CRC 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX2933C15D4/8GX 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL8G26C16U4B.8FD 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CM4B8G1L2666A18S4 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.C1GM3.C7W0B 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Crucial Technology RM51264BA1339.16FR 4GB
Corsair CMR64GX4M4C3333C16 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology D12.2344DT.001 4GB
Apacer Technology 78.A1GC6.9H10C 2GB
Corsair CMW16GX4M2K4000C19 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X16GE2666C16K8 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Samsung M378B5673FH0-CH9 2GB
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
×
Bug description
Source link