RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS512MLH64V1H 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Transcend Information TS512MLH64V1H 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Transcend Information TS512MLH64V1H 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster write speed, GB/s
11.8
11.7
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Transcend Information TS512MLH64V1H 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
51
Around -122% lower latency
Faster reading speed, GB/s
16.4
15.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS512MLH64V1H 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
23
Read speed, GB/s
15.6
16.4
Write speed, GB/s
11.8
11.7
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2575
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information TS512MLH64V1H 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
SpecTek Incorporated ?????????????????? 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3400C16-8GTZ 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS512MLH64V1H 4GB
Kingston KHX318C10FR/8G 8GB
V-GEN D4S8GL30A8TS5 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Kingston HP698651-154-MCN 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Samsung 1600 CL10 Series 8GB
Neo Forza NMUD416E82-3600 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMN16GX4M2Z3200C16 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3200C16-8GRKB 8GB
Kingston KTC1G-UDIMM 1GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C16-16GTRS 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMK16GX4M4A2666C15 4GB
Report a bug
×
Bug description
Source link