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Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H8GL32A8TS 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs V-GEN D4H8GL32A8TS 8GB

Overall score
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Overall score
star star star star star
V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

Differences Specifications Comments

Differences

Micron Technology 8ATF2G64HZ-3G2E2 16GB Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
  • Faster write speed, GB/s
    11.8 left arrow 9.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 19200
    Around 1.33% higher bandwidth
V-GEN D4H8GL32A8TS 8GB Reasons to consider
V-GEN D4H8GL32A8TS 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    40 left arrow 51
    Around -28% lower latency
  • Faster reading speed, GB/s
    17.5 left arrow 15.6
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H8GL32A8TS 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    51 left arrow 40
  • Read speed, GB/s
    15.6 left arrow 17.5
  • Write speed, GB/s
    11.8 left arrow 9.7
  • Memory bandwidth, mbps
    25600 left arrow 19200
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2687 left arrow 2462

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

V-GEN D4H8GL32A8TS 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-GEN D4H8GL32A8TS 8GB
V-GEN D4H8GL32A8TS 8GB
Memory RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
Memory RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
Memory RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Memory RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK8GX4M2A2800C16 4GB
Corsair CMK8GX4M2A2800C16 4GB
Memory RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
Memory RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
Memory RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CMK16GX4M4B3866C18 4GB
Memory RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Memory RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Samsung M393B1G70BH0-CK0 8GB
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Kingston XN205T-MIE2 16GB
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Memory RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR32GX4M4C3000C15 8GB
Corsair CMR32GX4M4C3000C15 8GB
Memory RAM