RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8KTF51264HZ-1G6D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Micron Technology 8KTF51264HZ-1G6D1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Micron Technology 8KTF51264HZ-1G6D1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8KTF51264HZ-1G6D1 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
122
Around 79% lower latency
Faster reading speed, GB/s
11.5
9.4
Average value in the tests
Faster write speed, GB/s
7.5
5.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 8KTF51264HZ-1G6D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
122
Read speed, GB/s
11.5
9.4
Write speed, GB/s
7.5
5.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1977
1411
Micron Technology 8KTF51264HZ-1G6D1 4GB RAM comparisons
Micron Technology 8KTF51264HZ-1G6N1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVT8FP-HYC 4GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Micron Technology 8KTF51264HZ-1G6D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International (HK) STK2133C15-8GB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX3600C18D4/16GX 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KF3600C16D4/8GX 8GB
Samsung M378B5773CH0-CH9 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Maxsun MSD44G24Q0 4GB
Kingston 9905469-143.A00LF 4GB
Corsair CMK16GX4M2B3200C16 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kingston 99U5471-052.A00LF 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Kingston KHX1600C9D3/4GX 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U300JJJM8G 8GB
Report a bug
×
Bug description
Source link