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Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378A2G43MB1-CTD 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung M378A2G43MB1-CTD 16GB

Overall score
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Overall score
star star star star star
Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Differences Specifications Comments

Differences

Nanya Technology M2F4GH64CB8HB6N-CG 4GB Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 43
    Around 40% lower latency
  • Faster reading speed, GB/s
    12.3 left arrow 11.6
    Average value in the tests
Samsung M378A2G43MB1-CTD 16GB Reasons to consider
Samsung M378A2G43MB1-CTD 16GB
Report a bug
  • Faster write speed, GB/s
    11.2 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 10600
    Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378A2G43MB1-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 43
  • Read speed, GB/s
    12.3 left arrow 11.6
  • Write speed, GB/s
    7.1 left arrow 11.2
  • Memory bandwidth, mbps
    10600 left arrow 25600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1952 left arrow 2615

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM comparisons

SK Hynix HMT125U6DFR8C-H9 2GB
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Samsung M378A2G43MB1-CTD 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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