RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-4266C17-8GTZR 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-4266C17-8GTZR 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
G Skill Intl F4-4266C17-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
17.1
Average value in the tests
Reasons to consider
G Skill Intl F4-4266C17-8GTZR 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
54
Around -69% lower latency
Faster write speed, GB/s
16.6
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-4266C17-8GTZR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
32
Read speed, GB/s
3,573.5
17.1
Write speed, GB/s
1,308.1
16.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
371
3742
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
G Skill Intl F4-4266C17-8GTZR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-4266C17-8GTZR 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix GKE160SO102408-2400 16GB
A-DATA Technology AD73I1B1672EG 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4B.8FE 8GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Samsung M3 78T5663EH3-CF7 2GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Apacer Technology 75.A73AA.G03 2GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
A-DATA Technology ADOVE1A0834E 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMSX32GX4M2A3000C16 16GB
Report a bug
×
Bug description
Source link