RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Below the latency in the PassMark tests, ns
54
73
Around 26% lower latency
Faster reading speed, GB/s
3
15.1
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Report a bug
Faster write speed, GB/s
7.9
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
73
Read speed, GB/s
3,573.5
15.1
Write speed, GB/s
1,308.1
7.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
371
1724
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905458-017.A01LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology 78.C2GFP.C700B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston HP26D4U6S8ME-8X 8GB
SpecTek Incorporated ?????????????????? 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung T471A1K43CB1-CRC 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK16GX4M2A2666C18 8GB
Samsung M471B5273CH0-CH9 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Apacer Technology 78.CAGPP.ARC0B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
AMD R538G1601U2S 8GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Samsung M471B5673FH0-CF8 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965662-002.A01G 16GB
Report a bug
×
Bug description
Source link