Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M471B5273DH0-CK0 4GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Samsung M471B5273DH0-CK0 4GB

Overall score
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Overall score
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 41
    Around 32% lower latency
  • Faster reading speed, GB/s
    13.3 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M471B5273DH0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 41
  • Read speed, GB/s
    11.7 left arrow 13.3
  • Write speed, GB/s
    8.4 left arrow 9.0
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1578 left arrow 2016
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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