RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Compare
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Overall score
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
40
72
Around -80% lower latency
Faster reading speed, GB/s
9.1
4
Average value in the tests
Faster write speed, GB/s
6.9
1,938.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
72
40
Read speed, GB/s
4,241.0
9.1
Write speed, GB/s
1,938.7
6.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
677
2031
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM comparisons
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5428-063.A00LF 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-2133C15-4GVR 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Samsung M471B5273DH0-CK0 4GB
Kingston 9905624-044.A00G 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3600C19-8GSXW 8GB
Kingston KHX1600C9S3L/4G 4GB
Samsung M378A1G43TB1-CTD 8GB
Corsair CMD16GX3M2A1866C9 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Report a bug
×
Bug description
Source link