RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Micron Technology 9ASF51272PZ-2G1A2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
43
Around 2% lower latency
Reasons to consider
Micron Technology 9ASF51272PZ-2G1A2 4GB
Report a bug
Faster reading speed, GB/s
11.4
9.7
Average value in the tests
Faster write speed, GB/s
9.5
6.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
43
Read speed, GB/s
9.7
11.4
Write speed, GB/s
6.0
9.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1396
2532
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT102464BF160B.C16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5700-027.A00G 8GB
Samsung M3 78T5663EH3-CF7 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Kingston 9905403-038.A00LF 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology DDR4 3000 2OZ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M391B5673EH1-CH9 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9965600-027.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS824A.M8FE 4GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Report a bug
×
Bug description
Source link