RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
122
Around 66% lower latency
Faster reading speed, GB/s
10.6
9.4
Average value in the tests
Faster write speed, GB/s
7.8
5.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
122
Read speed, GB/s
10.6
9.4
Write speed, GB/s
7.8
5.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2150
1411
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
G Skill Intl F3-2800C12-8GTXDG 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2133C15-8GFT 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston HP26D4S9S8MD-8 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KWTHG4-MIE 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3400C16-16GTZ 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMD16GX4M2B3733C17 8GB
Samsung M471B5173QH0-YK0 4GB
Mushkin MRX4U300GJJM16G 16GB
Corsair CML8GX3M2A1866C9 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Corsair CMZ16GX3M2A1866C9 8GB
A-DATA Technology DDR4 3000 8GB
Samsung M393B2G70BH0-CH9 16GB
Kllisre 8GB
Report a bug
×
Bug description
Source link