RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
56
Around 25% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
10.6
Average value in the tests
Faster write speed, GB/s
10.5
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
56
Read speed, GB/s
10.6
20.1
Write speed, GB/s
7.8
10.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2150
2455
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73DB0-YK0 8GB
Corsair CMD32GX4M4B3600C16 8GB
Samsung M378A1K43EB2-CWE 8GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Samsung M378A1K43EB2-CWE 8GB
Kingston XW21KG-MIE2 8GB
Kingston 99U5474-022.A00LF 2GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
Kingston 9965662-016.A00G 16GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMSX16GX4M2A3000C16 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
A-DATA Technology DDR4 2666 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905678-026.A00G 8GB
Report a bug
×
Bug description
Source link