RAM comparison Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Overall score

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Reasons to consider
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Below the latency in the PassMark tests, ns

29 35

Around -21% lower latency
Faster reading speed, GB/s

22.8 13.7

Average value in the tests
Faster write speed, GB/s

16.9 9.6

Average value in the tests
Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Complete list of technical specifications

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2312 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Absolute Latency

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