RAM comparison Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Overall score

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Below the latency in the PassMark tests, ns

28 35

Around -25% lower latency
Faster reading speed, GB/s

13.8 13.7

Average value in the tests
Faster write speed, GB/s

10.1 9.6

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2312 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns