RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A2K43DB1-CVF 16GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M378A2K43DB1-CVF 16GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
Samsung M378A2K43DB1-CVF 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Reasons to consider
Samsung M378A2K43DB1-CVF 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
35
Around -17% lower latency
Faster reading speed, GB/s
16.4
13.7
Average value in the tests
Faster write speed, GB/s
13.1
9.6
Average value in the tests
Higher memory bandwidth, mbps
23400
12800
Around 1.83 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A2K43DB1-CVF 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
30
Read speed, GB/s
13.7
16.4
Write speed, GB/s
9.6
13.1
Memory bandwidth, mbps
12800
23400
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
2312
3310
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Samsung M378A2K43DB1-CVF 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A2K43DB1-CVF 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Kingston 99U5471-012.A00LF 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Samsung M393A1G40DB0-CPB 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-2666C15-8GRR 8GB
PNY Electronics PNY 2GB
INTENSO 5641152 4GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905624-023.A00G 8GB
Kingston 99U5584-017.A00LF 4GB
Kingston 9905743-034.A00G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2133C15-4GRK 4GB
Report a bug
×
Bug description
Source link