Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1G44AB0-CWE 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M471A1G44AB0-CWE 8GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Differences

  • Below the latency in the PassMark tests, ns
    35 left arrow 50
    Around 30% lower latency
  • Faster reading speed, GB/s
    15.3 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    10.9 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 50
  • Read speed, GB/s
    13.7 left arrow 15.3
  • Write speed, GB/s
    9.6 left arrow 10.9
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 2512
RAM Latency Calculator
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