RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
86
Around 59% lower latency
Faster write speed, GB/s
9.6
8.1
Average value in the tests
Reasons to consider
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Report a bug
Faster reading speed, GB/s
14.3
13.7
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
86
Read speed, GB/s
13.7
14.3
Write speed, GB/s
9.6
8.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2312
1658
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB RAM comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Samsung M378B5773CH0-CH9 2GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M391A2K43BB1-CTD 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
EVGA 8GX-D4-3000-MR 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Kingston KHX2400C14S4/16G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3600C18-16GVK 16GB
Kingston 9965525-018.A00LF 4GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Kingston 9965669-018.A00G 16GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3733C17-16GTZSW 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Mushkin MRB4U300GJJM16G 16GB
Report a bug
×
Bug description
Source link