RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Peak Electronics 256X64M-67E 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Peak Electronics 256X64M-67E 2GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Peak Electronics 256X64M-67E 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Peak Electronics 256X64M-67E 2GB
Report a bug
Faster reading speed, GB/s
5
15.6
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
39
Around -63% lower latency
Faster write speed, GB/s
12.1
1,597.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Peak Electronics 256X64M-67E 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
39
24
Read speed, GB/s
5,022.9
15.6
Write speed, GB/s
1,597.0
12.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
753
2852
Peak Electronics 256X64M-67E 2GB RAM comparisons
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-CK0 8GB
Apacer Technology 78.CAGNK.4040B 8GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9965684-005.A00G 8GB
SpecTek Incorporated ?????????????????? 2GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Kingston KHX2133C11D3/4GX 4GB
Samsung M386A4G40DM0-CPB 32GB
ASint Technology SSA302G08-EGN1C 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingston KF3200C16D4/16GX 16GB
A-DATA Technology AD5U48008G-B 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston XRMWRN-MIE2 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMV16GX4M1A2133C15 16GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA41GR7AFR8N-UH 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston ACR24D4S7D8MB-16 16GB
Report a bug
×
Bug description
Source link