PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB

PNY Electronics PNY 2GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 36
    Around 25% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    10.6 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 36
  • Read speed, GB/s
    13.8 left arrow 13.7
  • Write speed, GB/s
    8.4 left arrow 10.6
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2504
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons