PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

PNY Electronics PNY 2GB vs Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Overall score
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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 71
    Around 62% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 6.8
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 4.7
    Average value in the tests

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 71
  • Read speed, GB/s
    13.8 left arrow 6.8
  • Write speed, GB/s
    8.4 left arrow 4.7
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1130
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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