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PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

PNY Electronics PNY 2GB vs Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 71
    左右 62% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 4.7
    测试中的平均数值
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB 需要考虑的原因
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
报告一个错误

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 71
  • 读取速度，GB/s
    13.8 left arrow 6.8
  • 写入速度，GB/s
    8.4 left arrow 4.7
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 1130

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Kingston HP32D4S2S1ME-4 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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