PNY Electronics PNY 2GB vs Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 71

左右 62% 更低的延时
更快的读取速度，GB/s

13.8 6.8

测试中的平均数值
更快的写入速度，GB/s

8.4 4.7

测试中的平均数值

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

需要考虑的原因
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

报告一个错误

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 71
读取速度，GB/s

13.8 6.8
写入速度，GB/s

8.4 4.7
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2274 1130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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