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PNY Electronics PNY 2GB
Kingston 9965426-130.A00LF 4GB

PNY Electronics PNY 2GB vs Kingston 9965426-130.A00LF 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Kingston 9965426-130.A00LF 4GB

Kingston 9965426-130.A00LF 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.1
    测试中的平均数值
Kingston 9965426-130.A00LF 4GB 需要考虑的原因
Kingston 9965426-130.A00LF 4GB
报告一个错误

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Kingston 9965426-130.A00LF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.8 left arrow 11.4
  • 写入速度，GB/s
    8.4 left arrow 7.1
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2041

PNY Electronics PNY 2GB RAM的比较

Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Kingston 9965426-130.A00LF 4GB RAM的比较

Samsung M378A1K43BB1-CPB 8GB
Kingston KVR26N19D8/16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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