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PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Compare
PNY Electronics PNY 2GB vs Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Overall score
PNY Electronics PNY 2GB
Overall score
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
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Below the latency in the PassMark tests, ns
27
71
Around 62% lower latency
Faster reading speed, GB/s
13.8
6.8
Average value in the tests
Faster write speed, GB/s
8.4
4.7
Average value in the tests
Reasons to consider
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Report a bug
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
27
71
Read speed, GB/s
13.8
6.8
Write speed, GB/s
8.4
4.7
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2274
1130
PNY Electronics PNY 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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Absolute Latency
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