PNY Electronics PNY 2GB vs Samsung M393A1G40DB0-CPB 8GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 49

Around 45% lower latency
Faster reading speed, GB/s

13.8 10.9

Average value in the tests

Samsung M393A1G40DB0-CPB 8GB

Reasons to consider
Samsung M393A1G40DB0-CPB 8GB

Faster write speed, GB/s

8.7 8.4

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

Samsung M393A1G40DB0-CPB 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 49
Read speed, GB/s

13.8 10.9
Write speed, GB/s

8.4 8.7
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2274 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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