PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

PUSKILL DDR3 1600 8G 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Differences

  • Faster reading speed, GB/s
    16.7 left arrow 16
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    24 left arrow 38
    Around -58% lower latency
  • Faster write speed, GB/s
    12.5 left arrow 10.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 24
  • Read speed, GB/s
    16.7 left arrow 16.0
  • Write speed, GB/s
    10.0 left arrow 12.5
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2753 left arrow 2925
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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