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Qimonda 72T128420EFA3SB2 1GB
Micron Technology 4ATF51264AZ-2G3B1 4GB

Qimonda 72T128420EFA3SB2 1GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

Overall score
star star star star star
Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Differences Specifications Comments

Differences

Qimonda 72T128420EFA3SB2 1GB Reasons to consider
Qimonda 72T128420EFA3SB2 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    2,069.2 left arrow 11.2
    Average value in the tests
Micron Technology 4ATF51264AZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-2G3B1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 106
    Around -212% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Qimonda 72T128420EFA3SB2 1GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    106 left arrow 34
  • Read speed, GB/s
    3,273.7 left arrow 15.6
  • Write speed, GB/s
    2,069.2 left arrow 11.2
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    734 left arrow 2468

Qimonda 72T128420EFA3SB2 1GB RAM comparisons

Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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