RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3020EC58E9F1333 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Compare
Ramaxel Technology RMT3020EC58E9F1333 4GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Overall score
Ramaxel Technology RMT3020EC58E9F1333 4GB
Overall score
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3020EC58E9F1333 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
59
Around 51% lower latency
Reasons to consider
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Report a bug
Faster reading speed, GB/s
17.3
9
Average value in the tests
Faster write speed, GB/s
7.6
5.7
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3020EC58E9F1333 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
59
Read speed, GB/s
9.0
17.3
Write speed, GB/s
5.7
7.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1274
1954
Ramaxel Technology RMT3020EC58E9F1333 4GB RAM comparisons
Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905702-014.A00G 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMR64GX4M8C3200C16 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-2666C15-8GRR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
AMD R5316G1609U2K 8GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Team Group Inc. UD5-6400 16GB
Corsair CMT16GX4M2C3000C15 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3600C16-8GVK 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston 99U5584-001.A00LF 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Report a bug
×
Bug description
Source link