RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Compare
Ramaxel Technology RMT3160ED58E9W1600 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Ramaxel Technology RMT3160ED58E9W1600 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3160ED58E9W1600 4GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
40
Around -82% lower latency
Faster reading speed, GB/s
17.7
12.3
Average value in the tests
Faster write speed, GB/s
12.7
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
22
Read speed, GB/s
12.3
17.7
Write speed, GB/s
7.8
12.7
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1806
3075
Ramaxel Technology RMT3160ED58E9W1600 4GB RAM comparisons
AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4000C16-8GVK 8GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMK64GX5M2B5200C40 32GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMR16GX4M2C3000C15 8GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.C2GF2.AU00B 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K43CBCBCRC 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4000C19-4GVK 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMT64GX4M2C3600C18 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3600C14-16GVK 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 3733 C17 Series 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Report a bug
×
Bug description
Source link