RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-3200C16-16GTZKO 16GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
G Skill Intl F4-3200C16-16GTZKO 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-16GTZKO 16GB
Report a bug
Below the latency in the PassMark tests, ns
21
25
Around -19% lower latency
Faster reading speed, GB/s
18.7
15.3
Average value in the tests
Faster write speed, GB/s
14.3
9.8
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
21
Read speed, GB/s
15.3
18.7
Write speed, GB/s
9.8
14.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2646
3437
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD5U48008G-B 8GB
Kllisre M378A1K43BB2-CRC 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C19-4GVK 4GB
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
G Skill Intl F3-1600C11-4GNS 4GB
Samsung 9905599-020.A00G 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
AMD AE34G1601U1 4GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Corsair CMSX4GX3M1A1600C9 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9905403-156.A00LF 2GB
A-DATA Technology DDR4 4133 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C14-8GTZN 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905701-132.A00G 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Samsung M391B5673EH1-CH9 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
×
Bug description
Source link