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Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Faster reading speed, GB/s
18.1
16.1
Average value in the tests
Faster write speed, GB/s
15.6
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
16.1
18.1
Write speed, GB/s
10.1
15.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3693
Samsung 1600 CL10 Series 8GB RAM comparisons
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Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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