RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Corsair CMD64GX4M8B3200C16 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Corsair CMD64GX4M8B3200C16 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Corsair CMD64GX4M8B3200C16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
26
Around 4% lower latency
Faster reading speed, GB/s
16.1
14.8
Average value in the tests
Reasons to consider
Corsair CMD64GX4M8B3200C16 8GB
Report a bug
Faster write speed, GB/s
11.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMD64GX4M8B3200C16 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
26
Read speed, GB/s
16.1
14.8
Write speed, GB/s
10.1
11.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3073
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD64GX4M8B3200C16 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Corsair CMD64GX4M8B3200C16 8GB
Kingston 99U5474-028.A00LF 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMT32GX4M2C3200C16 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
AMD R748G2400U2S 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 76.D305G.D060B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A5244BB0-CRC 4GB
Strontium EVMT8G1600U86S 8GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
A-DATA Technology DOVF1B163G2G 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Samsung M471B5173QH0-YK0 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Apacer Technology 78.01GA0.9K5 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Report a bug
×
Bug description
Source link