RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
44
Around 43% lower latency
Reasons to consider
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Report a bug
Faster reading speed, GB/s
17.3
16.1
Average value in the tests
Faster write speed, GB/s
10.8
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
44
Read speed, GB/s
16.1
17.3
Write speed, GB/s
10.1
10.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2523
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Panram International Corporation W4U3200PS-16G 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Samsung M378B5273DH0-CH9 4GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston KHX2400C15S4/16G 16GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-2400C15-16GFXR 16GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA84GR7MFR4N-UH 32GB
Kingston ACR16D3LS1KNG/4G 4GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston RB24D4U7S8MB-8 8GB
Kingston 9905403-156.A00LF 2GB
Corsair CMSO8GX4M1A2133C15 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Report a bug
×
Bug description
Source link