RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
38
Around 34% lower latency
Faster reading speed, GB/s
16.1
14.5
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Report a bug
Faster write speed, GB/s
10.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
38
Read speed, GB/s
16.1
14.5
Write speed, GB/s
10.1
10.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2659
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3600C18-32GTRS 32GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Corsair VSA2GSDS667C4 2GB
Heoriady M378A1K43BB2-CTD 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Essencore Limited KD4AGU88C-26N1900 16GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3000C16-16GTZR 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
Samsung M3 78T5663EH3-CF7 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
Report a bug
×
Bug description
Source link