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Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 4ATF51264HZ-2G6E3 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
31
Around 19% lower latency
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E3 4GB
Report a bug
Faster reading speed, GB/s
16.6
16.1
Average value in the tests
Faster write speed, GB/s
12.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
31
Read speed, GB/s
16.1
16.6
Write speed, GB/s
10.1
12.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2605
Samsung 1600 CL10 Series 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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