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Samsung 1600 CL10 Series 8GB
Panram International Corporation PUD42400C154GNJW 4GB

Samsung 1600 CL10 Series 8GB vs Panram International Corporation PUD42400C154GNJW 4GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 27
    Around 7% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 8.7
    Average value in the tests
Panram International Corporation PUD42400C154GNJW 4GB Reasons to consider
Panram International Corporation PUD42400C154GNJW 4GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Panram International Corporation PUD42400C154GNJW 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 27
  • Read speed, GB/s
    16.1 left arrow 13.7
  • Write speed, GB/s
    10.1 left arrow 8.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2193

Samsung 1600 CL10 Series 8GB RAM comparisons

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Samsung 1600 CL10 Series 8GB

Panram International Corporation PUD42400C154GNJW 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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