Samsung 1600 CL10 Series 8GB vs Samsung M378A5143TB2-CTD 4GB

Overall score

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB

Reasons to consider
Samsung 1600 CL10 Series 8GB

Below the latency in the PassMark tests, ns

25 76

Around 67% lower latency
Faster reading speed, GB/s

16.1 10.3

Average value in the tests
Faster write speed, GB/s

10.1 6.9

Average value in the tests

Samsung M378A5143TB2-CTD 4GB

Reasons to consider
Samsung M378A5143TB2-CTD 4GB

Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung 1600 CL10 Series 8GB

Samsung M378A5143TB2-CTD 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

25 76
Read speed, GB/s

16.1 10.3
Write speed, GB/s

10.1 6.9
Memory bandwidth, mbps

12800 21300

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2764 1260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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