Samsung 1600 CL10 Series 8GB vs Samsung M378A5143TB2-CTD 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 76

左右 67% 更低的延时
更快的读取速度，GB/s

16.1 10.3

测试中的平均数值
更快的写入速度，GB/s

10.1 6.9

测试中的平均数值

Samsung M378A5143TB2-CTD 4GB

需要考虑的原因
Samsung M378A5143TB2-CTD 4GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Samsung M378A5143TB2-CTD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 76
读取速度，GB/s

16.1 10.3
写入速度，GB/s

10.1 6.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 1260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Kingston 9905469-143.A00LF 4GB

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Samsung M391A2K43BB1-CTD 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Gloway International (HK) STKD4XMP2400-F 4GB

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Essencore Limited KD48GU880-26N160T 8GB

Essencore Limited KD48GU880-26N160T 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB