G Skill Intl F3-14900CL10-8GBXL 8GB vs Samsung 1600 CL10 Series 8GB

总分

G Skill Intl F3-14900CL10-8GBXL 8GB

G Skill Intl F3-14900CL10-8GBXL 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

差异规格评论

差异

G Skill Intl F3-14900CL10-8GBXL 8GB

需要考虑的原因
G Skill Intl F3-14900CL10-8GBXL 8GB

报告一个错误

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 -56% 更低的延时
更快的读取速度，GB/s

16.1 14.7

测试中的平均数值
更快的写入速度，GB/s

10.1 9.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL10-8GBXL 8GB

Samsung 1600 CL10 Series 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 25
读取速度，GB/s

14.7 16.1
写入速度，GB/s

9.2 10.1
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2580 2764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

Kingston KHX2133C14/8G 8GB

Kingston KHX2133C14/8G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

A-DATA Technology AO1P32MC8T1-BW3S 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Kingston KHX3733C19D4/16GX 16GB

Kingston KHX3733C19D4/16GX 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD32GX4M4C3200C14C 8GB

Corsair CMD32GX4M4C3200C14C 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB