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Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Samsung 1600 CL10 Series 8GB vs Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 83
    Around 70% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 14.3
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 8.1
    Average value in the tests
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB Reasons to consider
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 83
  • Read speed, GB/s
    16.1 left arrow 14.3
  • Write speed, GB/s
    10.1 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 1774

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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