RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Reasons to consider
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
43
Around -10% lower latency
Faster reading speed, GB/s
17.5
14.9
Average value in the tests
Faster write speed, GB/s
10.6
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
39
Read speed, GB/s
14.9
17.5
Write speed, GB/s
9.6
10.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2506
2600
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
A-DATA Technology DDR4 3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology CT8G4DFD8213.16FA11 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Mushkin 99[2/7/4]205[F/T] 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMD16GX4M2B3200C16 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C19-8GTZ 8GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905678-026.A00G 8GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSX16GX4M2A2400C16 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMN32GX4M2Z3600C18 16GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KYXC0V-MIB 16GB
Apacer Technology 78.C1GET.9K10C 8GB
Kingston HP32D4S2S1ME-4 4GB
Report a bug
×
Bug description
Source link