Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Overall score
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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Differences

  • Faster reading speed, GB/s
    14.9 left arrow 14.5
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    38 left arrow 43
    Around -13% lower latency
  • Faster write speed, GB/s
    10.4 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 38
  • Read speed, GB/s
    14.9 left arrow 14.5
  • Write speed, GB/s
    9.6 left arrow 10.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 2429
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