RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Avant Technology W6451U66J9266ND 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Avant Technology W6451U66J9266ND 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Avant Technology W6451U66J9266ND 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
59
72
Around 18% lower latency
Faster reading speed, GB/s
4
16.6
Average value in the tests
Reasons to consider
Avant Technology W6451U66J9266ND 4GB
Report a bug
Faster write speed, GB/s
8.2
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Avant Technology W6451U66J9266ND 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
72
Read speed, GB/s
4,833.8
16.6
Write speed, GB/s
2,123.3
8.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
1731
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Avant Technology W6451U66J9266ND 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Avant Technology W6451U66J9266ND 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Kingston 9965516-430.A00G 16GB
Essencore Limited KD44GU480-26N160T 4GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
Kingston 9905403-038.A00LF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston MSI26D4S9D8ME-16 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C15-16GTZKO 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M378A1G43EB1-CRC 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Team Group Inc. DDR4 2666 8GB
A-DATA Technology DQVE1908 512MB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Report a bug
×
Bug description
Source link