RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMT32GX4M4C3600C18 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMT32GX4M4C3600C18 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Corsair CMT32GX4M4C3600C18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
18.5
Average value in the tests
Faster write speed, GB/s
2,123.3
16.1
Average value in the tests
Reasons to consider
Corsair CMT32GX4M4C3600C18 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
59
Around -103% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMT32GX4M4C3600C18 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
29
Read speed, GB/s
4,833.8
18.5
Write speed, GB/s
2,123.3
16.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
3761
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Corsair CMT32GX4M4C3600C18 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston HX318C10FK/4 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT4G4DFS824A.C8FBR2 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMT64GX4M4Z3600C18 16GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-4000C17-8GVKB 8GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Avant Technology J641GU42J9266NL 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston KHX426C13/8G 8GB
Kingston HX316C10F/8 8GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
G Skill Intl F4-4000C16-16GVKA 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston LV32D4U2S8HD-8X 8GB
Samsung M391B5673EH1-CH9 2GB
Avant Technology J644GU44J2320NF 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. Team-Elite-2133 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3600C17-8GVK 8GB
Report a bug
×
Bug description
Source link