RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
16.6
Average value in the tests
Reasons to consider
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
59
Around -157% lower latency
Faster write speed, GB/s
8.9
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
23
Read speed, GB/s
4,833.8
16.6
Write speed, GB/s
2,123.3
8.9
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
2631
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB RAM comparisons
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4000C14-16GTZR 16GB
Kllisre D4 8G 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C16-16GVRB 16GB
Kingston 99U5584-004.A00LF 4GB
Gloway International (HK) STK4U2400D17042C 4GB
Samsung M393B2G70BH0-CK0 16GB
Avant Technology J641GU42J9266ND 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Panram International Corporation PUD42400C154GNJW 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX3466C19D4/16G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMU64GX4M4A2666C16 16GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4000C19-16GTRS 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR64GX4M4C3466C16 16GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA84GR7JJR4N-VK 32GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology D22.23263S.002 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston KHX3733C19D4/8GX 8GB
Report a bug
×
Bug description
Source link