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Samsung M3 78T2863EHS-CF7 1GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Overall score
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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 16.5
    Average value in the tests
  • Faster write speed, GB/s
    2,123.3 left arrow 11.4
    Average value in the tests
Patriot Memory (PDP Systems) 2800 C16 Series 8GB Reasons to consider
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 59
    Around -79% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 33
  • Read speed, GB/s
    4,833.8 left arrow 16.5
  • Write speed, GB/s
    2,123.3 left arrow 11.4
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    731 left arrow 2913

Samsung M3 78T2863EHS-CF7 1GB RAM comparisons

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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