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Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Overall score
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Differences Specifications Comments

Differences

Samsung M3 78T2863EHS-CF7 1GB Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    59 left arrow 71
    Around 17% lower latency
  • Faster reading speed, GB/s
    4 left arrow 15.5
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
  • Faster write speed, GB/s
    8.3 left arrow 2,123.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 71
  • Read speed, GB/s
    4,833.8 left arrow 15.5
  • Write speed, GB/s
    2,123.3 left arrow 8.3
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    731 left arrow 1902

Samsung M3 78T2863EHS-CF7 1GB RAM comparisons

Samsung M3 78T2863QZS-CE6 1GB
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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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