Samsung M3 78T2863QZS-CF7 1GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M3 78T2863QZS-CF7 1GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 10
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    52 left arrow 69
    Around -33% lower latency
  • Faster write speed, GB/s
    7.6 left arrow 1,857.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    69 left arrow 52
  • Read speed, GB/s
    4,217.2 left arrow 10.0
  • Write speed, GB/s
    1,857.7 left arrow 7.6
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    668 left arrow 2169
RAM Latency Calculator
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