RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-3200C14-8GTZSK 8GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
G Skill Intl F4-3200C14-8GTZSK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
20.1
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C14-8GTZSK 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
58
Around -132% lower latency
Faster write speed, GB/s
16.8
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
25
Read speed, GB/s
4,241.0
20.1
Write speed, GB/s
1,950.7
16.8
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
651
4060
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-8GTZSK 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Apacer Technology 78.01G86.9H50C 1GB
Kingston LV36D4U1S8HD-8XR 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMSX16GX4M2A2400C16 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D30BESBK.8FB 8GB
Kingston KF552C40-16 16GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M471A1K1KBB1-CRC 8GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-3200C16-8GTZRN 8GB
Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung M393B2G70BH0-CK0 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Report a bug
×
Bug description
Source link