RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
17.1
Average value in the tests
Reasons to consider
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
58
Around -107% lower latency
Faster write speed, GB/s
15.3
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
28
Read speed, GB/s
4,241.0
17.1
Write speed, GB/s
1,950.7
15.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
651
3480
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2953EZ3-CF7 1GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KF3200C20S4/8G 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BL8G32C16U4R.8FE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD16GX4M4B3200C16 4GB
Kingston 9905403-038.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Corsair CML8GX3M2A1600C9 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CM4X16GE2133C13K8 16GB
Kingston KP223C-ELD 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMD16GX4M2A2666C15 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Avant Technology J641GU48J5213NG 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-16GRS 16GB
Report a bug
×
Bug description
Source link